Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
- 주제(기타) Multidisciplinary Sciences
- 설명문(일반) [Jeong, Junseok; Jin, Dae Kwon; Hong, Young Joon] Sejong Univ, Dept Nanotechnol & Adv Mat Engn, Seoul 05006, South Korea; [Jeong, Junseok; Cha, Janghwan; Jin, Dae Kwon; Hong, Suklyun; Kim, Moon J.; Hong, Young Joon] Sejong Univ, GRI TPC Int Res Ctr, Seoul 05006, South Korea; [Wang, Qingxiao; Kwon, Sunah; Kim, Moon J.] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA; [Cha, Janghwan; Hong, Suklyun; Kim, Moon J.] Sejong Univ, Graphene Res Inst GRI, Dept Phys & Astron, Seoul 05006, South Korea; [Shin, Dong Hoon; Lee, Sangwook] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Kang, Bong Kyun; Yang, Woo Seok] Korea Elect Technol Inst KETI, Nano Mat Res Ctr, Seongnam 13509, Gyeonggi Do, South Korea; [Jang, Jun Hyuk; Choi, Yong Seok] CoAsia Co Ltd, ITSWELL Div R&D Ctr, Incheon 21634, South Korea; [Yoo, Jinkyoung] Los Alamos Natl Lab, Ctr Integrated Nanotechnol CINT, Los Alamos, NM 87545 USA; [Kim, Jong Kyu] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South Korea; [Lee, Chul-Ho] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Anam Ro 145, Seoul 02841, South Korea; [Zakhidov, Anvar A.] Univ Texas Dallas, TPC, Richardson, TX 75080 USA; [Zakhidov, Anvar A.] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
- 등재 SCIE, SCOPUS
- OA유형 Green Published, gold, Green Submitted
- 발행기관 AMER ASSOC ADVANCEMENT SCIENCE
- 발행년도 2020
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000168728
- 본문언어 영어
- Published As https://dx.doi.org/10.1126/sciadv.aaz5180
- PubMed https://pubmed.ncbi.nlm.nih.gov/32537496
초록/요약
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for deformable device applications. Herein, we demonstrate a method of creating a deformable LED, based on remote heteroepitaxy of GaN microrod (MR) p-n junction arrays on c-Al2O3 wafer across graphene. The use of graphene allows the transfer of MR LED arrays onto a copper plate, and spatially separate MR arrays offer ideal device geometry suitable for deformable LED in various shapes without serious device performance degradation. Moreover, remote heteroepitaxy also allows the wafer to be reused, allowing reproducible production of MR LEDs using a single substrate without noticeable device degradation. The remote heteroepitaxial relation is determined by high-resolution scanning transmission electron microscopy, and the density functional theory simulations clarify how the remote heteroepitaxy is made possible through graphene.
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