Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
- 주제(키워드) 2D materials , defects , dual-gate ReS2 , field-effect transistors , hexagonal boron nitride
- 등재 SCIE, SCOPUS
- 발행기관 John Wiley and Sons Inc
- 발행년도 2021
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000181780
- 본문언어 영어
- Published As http://dx.doi.org/10.1002/adfm.202100625
초록/요약
In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias. © 2021 Wiley-VCH GmbH
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