Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes
- 주제(키워드) O-Polar bulk ZnO , Oxygen plasma , Interface state density
- 등재 SCIE, SCOPUS
- 발행기관 PERGAMON-ELSEVIER SCIENCE LTD
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000087217
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.vacuum.2013.07.024
초록/요약
Using current voltage (I-V) and capacitance voltage (C-V) measurements, the effect of oxygen plasma treatment on the electrical properties of Ag Schottky contacts to hydrothermally-grown O-polar bulk ZnO was investigated. Schottky contacts to untreated ZnO had higher barrier heights and lower ideality factors than those to oxygen plasma treated ZnO. The measured C-V and conductance voltage (G/omega-V) characteristics for both samples showed strong dependences on bias voltage and frequency. The increments of series resistance in small forward bias region (0-0.5 V) was larger for oxygen plasma treated ZnO, indicating that the contribution of interface states to series resistance was more significant. The interface state density was obtained from the corrected C-V and G/omega-V characteristics with considering series resistance. The higher interface state density was found for oxygen plasma treated ZnO, implying that oxygen plasma induced the interface states near the ZnO surface. 2013 Elsevier Ltd. All rights reserved.
more