Unified Analytical Model for Switching Behavior of Magnetic Tunnel Junction
- 주제(키워드) Magnetic tunnel junction (MTJ) , magnetoresistive random access memory (MRAM) , spin-transfer torque (STT) , switching time
- 등재 SCIE, SCOPUS
- 발행기관 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000090771
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/LED.2013.2293598
초록/요약
The switching time of the magnetic tunnel junction for spin-transfer torque magnetoresistive random access memory is investigated as a function of the current. We present a unified analytical model for switching time so that the problem of discontinuity around the critical current is solved. The suggested unified model shows excellent agreement with the experimental data of parallel/antiparallel states simultaneously. Furthermore, only one set of parameters is used to represent all switching regime in our model.
more