Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs
- 주제(키워드) Strained Si , Electron mobility , Uniaxial strain , Biaxial strain , Stress
- 등재 SCIE, SCOPUS
- 발행기관 PERGAMON-ELSEVIER SCIENCE LTD
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000090772
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.sse.2014.01.005
초록/요약
The uniaxial stress effect for high electron mobility on biaxially-strained n-MOSFET is investigated by using a one-dimensional self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. We have found that the uniaxial stress effect on biaxially-strained n-MOSFET is significantly different from the uniaxial stress effect on unstrained Si n-MOSFET. It is well known that longitudinal and transverse tensile uniaxial stresses are advantageous for strain-induced high electron mobility. However, we found that the uniaxial strain condition for electron mobility enhancement is changed when it is applied to the biaxially- strained n-MOSFET. To optimize the combined effect of uniaxial and biaxial strain, the longitudinal tensile and transverse compressive uniaxial stresses are advantageous and vertical stress is not helpful for biaxially-strained n-MOSFET. (C) 2014 Elsevier Ltd. All rights reserved.
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