Raman Spectroscopy of the Damages Induced by Ar-Ion Beam. Etching of InSb(100) Surface
- 발행기관 ELECTROCHEMICAL SOC INC
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000091213
- 본문언어 영어
- Published As http://dx.doi.org/10.1149/2.009402ssl
초록/요약
The strong enhancement of forbidden TO mode on Ar ion beam-etched InSb(100) surfaces was examined by Raman spectroscopy. By raising the applied RF power in Ar-ion etching from 50 to 200 W, the integrated area ratio of I-TO/I-LO increased from 0.05 to 0.23 and the full width at half maximum of LO peak increased from 5.46 to 7.46 cm(-1). Such increases are induced by the partly disordered structure deformed by bombarded Ar ions. Raman spectroscopy could investigate the microscopic damages of the crystalline structure leading to break the Raman selection rules. (C) 2013 The Electrochemical Society. All rights reserved.
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