Temperature Dependence of Electron Mobility in Uniaxial Strained nMOSFETs
- 주제(키워드) Electron mobility , stress , strain , intravalley phonon mobility , temperature
- 등재 SCIE, KCI등재, SCOPUS
- 발행기관 IEEK PUBLICATION CENTER
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000091594
- 본문언어 영어
- Published As http://dx.doi.org/10.5573/JSTS.2014.14.2.146
초록/요약
The temperature dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The calculated results suggest that vertical compressive stress is more efficient to maintain the strain-enhanced electron mobility than longitudinal tensile stress in high temperature condition.
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