Temperature-dependent current-voltage characteristics in ZnO based Schottky diodes
- 주제(키워드) Current-voltage measurements , Ideality factors , Increasing temperatures , Interface state density , Series and shunt resistances , Shunt resistances , Thermally-assisted tunneling , ZnO , Interface states , Materials science , Schottky barrier diodes , Zinc oxide
- 후원정보 Science and Engineering Institute, USA
- 등재 SCOPUS
- 발행기관 Trans Tech Publications Inc
- 발행년도 2014
- 총서유형 Journal
- 회의명 2014 4th International Conference on Advanced Materials Research, ICAMR 2014
- 일자 22 January 2014 through 23 January 2014
- URI http://www.dcollection.net/handler/ewha/000000096453
- ISBN 2147483647
- 본문언어 영어
- Published As http://dx.doi.org/10.4028/www.scientific.net/AMR.894.391
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
Using currentvoltage (IV) measurements, the temperature-dependent current transport in Ag/Zn-polar ZnO Schottky diodes was investigated. Both the series and shunt resistances of the diode were altered at the different temperatures, which were related to the amount of free carriers and the formation of a vacuum-activated surface conduction path, respectively. The reverse biased current transport was associated with a thermally assisted tunneling field emission of carriers and the Poole-Frenkel effect, for higher and lower voltages, respectively. The average interface state density decreased with increasing temperature, which was due to a result of molecular restructuring and reordering and/or variation of the ideality factor with temperatures across the Ag/ZnO interface.
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