Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metal
- 등재 SCIE, SCOPUS
- 발행기관 Institution of Engineering and Technology
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000098547
- 본문언어 영어
- Published As http://dx.doi.org/10.1049/el.2013.3443
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
The anomalous drain-induced barrier lowering (DIBL) effect of longchannel thin-film transistors (TFTs) with a light shield (LS) is investigated by two-dimensional (2D) device simulation. In long-channel TFTs with a LS, which is long enough to neglect the DIBL effect and the floating body effect, a decrease of threshold voltage (Vth) was observed at high drain voltages. The Vth lowering is due to the large potential of the LS induced by the high drain voltage which lowers the height of the source potential barrier. It is found that the LS-induced DIBL effect can be larger as the length of the LS increases or the thickness of the buried oxide decreases. © 2014 The Institution of Engineering and Technology.
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