Probing the Growth Habit of Highly Single Crystalline Twinned V-Shape RuO2 Nanowires by Polarized Raman Scattering
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000108837
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/jp5069208
초록/요약
Polarized Raman scattering measurements have been carefully employed to explore the growth orientation and direction of a highly single crystalline twinned V-shaped ruthenium dioxide nanowire which were directly grown on a Si wafer with the thin SiO2 layer at 750 degrees C without any catalyst via a vapor phase transport process. Interestingly, the morphology of most of nanowires represents a well-defined twinned V-shape with a specific angle of approximately 52 degrees between the two branches under a specific growth condition. We measured polarized Raman spectra of a single V-shaped nanowire and calculated the Raman intensity of RuO2 nanowire by considering a crystal coordinate. We observed that each branch of a V-shaped RuO2 nanowire grows into [001] direction, exactly consistent with the prediction of the growth direction by high resolution transmission electron microscopy (HRTEM).
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