Substrate Doping Concentration Dependence of Electron Mobility Enhancement in Uniaxial Strained (110)/< 110 > nMOSFETs
- 주제(키워드) Electron mobility , stress , strain , intravalley phonon mobility , intervalley phonon mobility , wafer orientation
- 등재 SCIE, KCI등재
- 발행기관 IEEK PUBLICATION CENTER
- 발행년도 2014
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000113646
- 본문언어 영어
- Published As http://dx.doi.org/10.5573/JSTS.2014.14.5.518
초록/요약
The substrate doping concentration dependence of strain-enhanced electron mobility in (110)/<110> nMOSFETs is investigated by using a self-consistent Schrodinger-Poisson solver. The electron mobility model includes Coulomb, phonon, and surface roughness scattering. The calculated results show that, in contrast to (100)/<110> case, the longitudinal tensile strain-induced electron mobility enhancement on the (110)/<110> can be increased at high substrate doping concentration.
more