Advanced Circuit-Level Model for Temperature-Sensitive Read/Write Operation of a Magnetic Tunnel Junction
- 주제(키워드) Magnetic tunnel junction (MTJ) , magnetoresistive random access memory (MRAM) , spin-transfer torque (STT) , tunneling magnetoresistance (TMR)
- 등재 SCIE, SCOPUS
- 발행기관 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000114410
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/TED.2014.2380819
초록/요약
A circuit-level model of a magnetic tunnel junction (MTJ) that accurately depicts the spin-transfer torque switching behavior of an MTJ along with its voltage/temperature dependency is presented. The unified switching model that was suggested in our previous work is suitable for the circuit-level model because the model seamlessly covers the entire current pulsewidth region. Based on this switching behavior model, a method of dynamic current monitoring is proposed for an advanced circuit-level model. The voltage/temperature characteristics of an MTJ are also integrated for a more accurate circuitlevel simulation. The proposed model corresponds well with the experimental data for switching characteristics at different temperatures. The design margin in the read/write circuits with an MTJ is analyzed to demonstrate the effectiveness of the model.
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