Incorporation of cobalt ions into magnetoelectric gallium ferrite epitaxial films: Tuning of conductivity and magnetization
- 등재 SCIE, SCOPUS
- 발행기관 Royal Society of Chemistry
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000115448
- 본문언어 영어
- Published As http://dx.doi.org/10.1039/c5ra03609g
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
Thin films of Ga<inf>0.6</inf>Fe<inf>1.4</inf>O<inf>3</inf> show ferrimagnetism with a transition temperature at around 360 K but suffer from large charge conduction. Substituting Fe2+ with non-magnetic Mg2+ ions reduces the charge conduction but also lowers the magnetic transition temperature. Doping Ga<inf>0.6</inf>Fe<inf>1.4</inf>O<inf>3</inf> thin films with magnetic Co2+ ions leads to a similar reduction in the charge conduction, which is significant by two orders of magnitude, and, on the other hand, does not lead to any modification of the ferrimagnetic transition. The remnant magnetization of the leakage currents free Co-doped Ga<inf>0.6</inf>Fe<inf>1.4</inf>O<inf>3</inf> thin films is of 53 emu cm-3 at 300 K. These films, therefore, are promising materials with potential uses in magnetoelectric and multiferroic devices. © The Royal Society of Chemistry 2015.
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