Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential
- 주제(키워드) mobility enhancement , uniaxial strain , deformation potential , silicon thickness , single gate , double gate
- 등재 SCIE, SCOPUS
- 발행기관 IOP PUBLISHING LTD
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000115885
- 본문언어 영어
- Published As http://dx.doi.org/10.1088/0268-1242/30/4/045009
