Forward current transport mechanism of Cu Schottky barrier formed on n-type Ge Wafer
- 주제(키워드) Barrier height , Ideality factor , Richardson constant
- 등재 KCI등재, SCOPUS
- 발행기관 Korean Institute of Electrical and Electronic Material Engineers
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000118260
- 본문언어 영어
- Published As http://dx.doi.org/10.4313/TEEM.2015.16.3.151
초록/요약
We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm-2K-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm-2K-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N<inf>t</inf>), which was determined to be 1.46 × 1012 eV-1cm-3. © 2015 KIEEME. All rights reserved.
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