Investigation of power dissipation for ReRAM in crossbar array architecture
- 주제(키워드) crossbar array , power dissipation , ReRAM
- 등재 SCOPUS
- 발행기관 Institute of Electrical and Electronics Engineers Inc.
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000118380
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/NVMTS.2014.7060847
초록/요약
Power consumption of large-scale crossbar array architecture is investigated by the comprehensive crossbar array matrix model. The power dissipation is examined as functions of array size, leakage current of selector, and various bias schemes. The power consumption increases as the array size and the leakage current of selector increases. In addition, 1/3 bias scheme shows power consumption about 1∼2 orders of magnitude larger than other bias schemes. This phenomenon is induced from the unselected cells which is delivered with voltage about V<inf>dd</inf>/3, whereas the voltage of unselected cells are almost 0 V for 1/2 bias and floating bias schemes. © 2014 IEEE.
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