Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
- 주제(키워드) Current transport , Barrier inhomogeneity , Richardson constant
- 등재 SCIE, SCOPUS
- 발행기관 PERGAMON-ELSEVIER SCIENCE LTD
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000119952
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.vacuum.2015.08.011
초록/요약
We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300 K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300 K and a low-temperature range from 100 to 180 K. Modified Richardson plots revealed a Richardson constant of 160.0 Acm(-2) K-2 for the high-temperature region (220-300 K), which is comparable to the theoretical value of 140.0 Acm(-2) K-2 for n-type Ge. Reverse current analysis revealed that Poole Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively. (C) 2015 Elsevier Ltd. All rights reserved.
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