Visualization of local phase transition behaviors near dislocations in epitaxial VO2/TiO2 thin films
- 등재 SCIE, SCOPUS
- 발행기관 American Institute of Physics Inc.
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000120195
- 본문언어 영어
- Published As http://dx.doi.org/10.1063/1.4934943
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
We investigated local phase transition behaviors in epitaxial VO2/TiO2 thin films using variable-temperature Kelvin probe force microscopy while spanning the metal-insulator transition (MIT). Fully strained thin films were almost free of grain boundaries. In contrast, thicker films had cracks (dislocations) caused by strain relaxation. The surface area fraction of the insulating phase near the dislocations was higher than that in other regions. Thicker films have complicated domain patterns; hence, the three-dimensional percolation model properly described the MIT behaviors. In contrast, the two-dimensional percolation model well explained the transition behaviors of uniformly strained thinner films. © 2015 AIP Publishing LLC.
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