Improved dielectric properties of CaCu3Ti4O12 films with a CaTiO3 interlayer on Pt/TiO2/SiO2/Si substrates prepared by pulsed laser deposition
- 주제(키워드) CaCu3Ti4O12 films , dielectric property , leakage current , Poole-Frenkel conduction model , pulsed laser deposition
- 등재 SCIE, KCI등재, SCOPUS
- 발행기관 Kluwer Academic Publishers
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000120462
- 본문언어 영어
- Published As http://dx.doi.org/10.1007/s13391-015-5211-x
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
We report the greatly improved dielectric properties of CaCu3Ti4O12 (CCTO) films with a 60 nm-thick CaTiO3 (CTO) interlayer on Pt/TiO2/SiO2/Si substrates. Both CCTO films and CTO interlayers were prepared by pulsed laser deposition (PLD). With increasing the thickness of CCTO from 200 nm to 1.3 μm, the dielectric constants (εr) at 10 kHz in both CCTO single-layered and CCTO/CTO double-layered films increased from ∼260 to ∼6000 and from ∼630 to ∼3700, respectively. Compared with CCTO single-layered films, CCTO/CTO double-layered films irrespective of CCTO film thickness exhibited a remarkable decrease in their dielectric losses (tanδ) (<0.1 at the frequency region of 1 - 100 kHz) and highly reduced leakage current density at room temperature. The reduced leakage currents in CCTO/CTO double-layered films are attributable to relatively higher trap ionization energies in the Poole-Frenkel conduction model. © 2015, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
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