Surface photovoltage characterizations of Si nanopillar arrays for verifying field-effect passivation using a SiNx layer
- 주제(키워드) Antireflection , Mie resonance , Nanopillar , Si , Surface photovoltage
- 발행기관 Elsevier
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000120485
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.cap.2015.11.006
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
The surface photovoltage (SPV) characteristics of periodic nanopillar (NP) arrays formed on Si wafers were investigated. The NP arrays exhibited broadband omnidirectional antireflection effects with Mie resonance. Kelvin probe force microscopy (KPFM) revealed that the positive fixed charges in SiNx layers induced band bending at the Si surface and increased surface photovoltage (SPV) at the NP top surface. Estimated SPV values, determined by the amount of surface band bending, were similar in NPs and planar counterparts. This finding suggests that field effect passivation by the dielectric layer coating could help improve photovoltaic performance of nanostructure-based Si solar cells and that KPFM may be a useful tool for the investigation of surface electrical properties of Si nanostructures. © 2015 Elsevier B.V. All rights reserved.
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