Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1-x(Se,S)2 Thin-Film Solar Cells
- 주제(키워드) band gap grading , chalcogenization , CIGSSe , solar cells , solution process
- 등재 SCIE, SCOPUS
- 발행기관 American Chemical Society
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000122814
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acsami.5b09054
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
Significant enhancement of solution-processed CuInxGa1-x(Se,S)2 (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with Jsc of 28.3 mA/cm2, Voc of 601 mV, and FF of 68.6%. © 2015 American Chemical Society.
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