Analysis of the substantial reduction of strain-induced mobility enhancement in (110)-oriented ultrathin double-gate MOSFETs
- 등재 SCIE, SCOPUS
- 발행기관 Japan Society of Applied Physics
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000123011
- 본문언어 영어
- Published As http://dx.doi.org/10.7567/APEX.9.014201
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
The stress effect in uniaxially strained (100)- and (110)-oriented double-gate silicon-on-insulator nMOSFETs is analyzed. A model of the siliconthickness- dependent deformation potential (Dac-TSi) is used to accurately calculate the mobility by considering the quantum confinement effect. The mobility enhancements in the (100) and (110) orientations were found to exhibit considerably different silicon thickness dependencies. As the silicon thickness decreases, the mobility enhancement in the (100) case exhibits a second peak, whereas it diminishes in the (110) case. This phenomenon results from differences in the quantization mass that affect the energy differences between the first subbands of two- and four-fold degenerate valleys. © 2016 The Japan Society of Applied Physics.
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