Modulation of electrical properties in Cu/n-type InP Schottky junctions using oxygen plasma treatment
- 주제(키워드) oxygen plasma , barrier height , reverse current transport
- 등재 SCIE, SCOPUS
- 발행기관 IOP PUBLISHING LTD
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000123740
- 본문언어 영어
- Published As http://dx.doi.org/10.1088/0268-1242/30/12/125016
초록/요약
Using current-voltage (I-V) measurements, we investigated the effect of oxygen plasma treatment on the temperature-dependent electrical properties of Cu/n-type indium phosphide (InP) Schottky contacts at temperatures in the range 100-300 K. Changes in the electrical parameters were evident below 180 K for the low-plasma-power sample (100W), which is indicative of the presence of a wider distribution of regions of low barrier height. Modified Richardson plots were used to obtain Richardson constants, which were similar to the theoretical value of 9.4 A cm(-2) K-2 for n-type InP. This suggests that, for all the samples, a thermionic emission model including a spatially inhomogeneous Schottky barrier can be used to describe the charge transport phenomena at the metal/semiconductor interface. The voltage dependence of the reverse-bias current revealed that Schottky emission was dominant for the untreated and high-plasma-power (250 W) samples. For the low-plasma-power sample, Poole-Frenkel emission was dominant at low voltages, whereas Schottky emission dominated at higher voltages. Defect states and nonuniformity of the interfacial layer appear to be significant in the reverse-bias charge transport properties of the low-plasma-power sample.
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