ReRAM Crossbar Array: Reduction of Access Time by Reducing the Parasitic Capacitance of the Selector Device
- 주제(키워드) Access time , crossbar array , parasitic capacitance , selector device
- 등재 SCIE, SCOPUS
- 발행기관 IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000124072
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/TED.2015.2506598
초록/요약
The transient response of a crossbar array is investigated with HSPICE circuit simulation. A crossbar array contains many parasitic elements. This brief focuses on the parasitic capacitances of the selector devices and resistors. The read access time is determined for various array sizes and parasitic capacitances. The results show that the read access time increases with the array size and parasitic capacitance, particularly the selector capacitance. The effect of selector capacitance is analyzed with a time-dependent, unit-cell voltage model and simulation. The simulation results reveal that the selector capacitance has a greater effect than the resistor capacitance on the read access time because of the large time constant. The effect of the selector capacitance on the read access time remains significant for larger values of the other parasitic capacitances.
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