Influence of the ZnS precursor thickness on high efficiency Cu2ZnSn(S,Se)4 thin-film solar cells grown by stacked-sputtering and selenization process
- 주제(키워드) and photo-conversion efficiency , Cu2ZnSn(S , Se)4 , Depth profile , Kelvin probe force microscopy , Raman spectroscopy , Secondary phase
- 등재 SCOPUS
- 발행기관 Institute of Electrical and Electronics Engineers Inc.
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000126569
- ISBN 9781479979448
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/PVSC.2015.7356411
초록/요약
CZTSSe thin-films were deposited by stacked sputtering methods (ZnS/SnS/Cu) and annealed with selenization. We adjusted the thickness of the ZnS precursor layer in CZT precursors. A 337 nm thickness of ZnS precursor was shown an efficiency of up to 9.1%. We investigated the secondary phases by Raman spectroscopy and Kelvin probe force microscopy with depth profiles. The Cu2SnSe3, ZnSe, and MoSe2 secondary phases appeared near the back contact region. The phase distributions of the CZTSSe thin-films are different depending on ZnS precursor thickness with different depths. This phase characterization can describe the influences to the device performance of the CZTSSe thin-film solar cells. © 2015 IEEE.
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