An analysis of the read margin and power consumption of crossbar ReRAM arrays
- 주제(키워드) bias scheme , crossbar array , power consumption , read margin , Resistive Random Access Memory (ReRAM) , selector
- 등재 SCOPUS
- 발행기관 Institute of Electrical and Electronics Engineers Inc.
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000126614
- ISBN 9781479986415
- 본문언어 영어
- Published As http://dx.doi.org/10.1109/TENCON.2015.7372853
초록/요약
The read margin and power consumption for various selector characteristics and bias schemes are analyzed during read operation. The 1/2 and 1/3 bias schemes exhibit different read operation properties. There is a trade-off between the read margin and power consumption that depends on the bias scheme and characteristics of the selector. The read margin of the 1/2 bias scheme is decreased at low on/off ratios because of the output voltage drop across the LRS cell. This drop is due to a rapid increase in the leakage current when a selector with low on/off ratio is used in the 1/2 bias scheme. Therefore, the bias scheme and selector should be selected appropriately according to the purpose of the application. © 2015 IEEE.
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