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Analysis of the effect of the density of states on the characteristics of thin-film transistors

초록/요약

The effect of the density of states (DOS) on the electrical characteristics of thin-film transistors (TFTs) is investigated via an experiment and device simulations. The acceptor-like DOS of an n-type TFT was extracted based on its multi-frequency capacitance-voltage characteristics. The simulation results demonstrate that the electrical characteristics of n-type TFTs are affected not only by the acceptor-like DOS but also by the donor-like DOS. © 2015 IEEE.

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