Guideline model for the bias-scheme-dependent power consumption of a resistive random access memory crossbar array
- 등재 SCIE, SCOPUS
- 발행기관 Japan Society of Applied Physics
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000131147
- 본문언어 영어
- Published As http://dx.doi.org/10.7567/JJAP.55.04EE10
초록/요약
The 1/2 and 1/3 bias schemes are commonly used to select a cell in a resistive random access memory (ReRAM) crossbar array. The 1/3 bias scheme is advantageous in terms of its write margin but typically requires a higher power consumption than the 1/2 bias scheme. The power consumption of ReRAM can vary according to the nonlinearity of the selector device. In this paper, we propose a power guideline model that suggests selector nonlinearity requirements to guarantee a lower power consumption for the 1/3 bias scheme than for the 1/2 bias scheme. Therefore, the selector nonlinearity requirements for the low power consumption of the 1/3 bias scheme can be immediately obtained using this guideline model without simulation. © 2016 The Japan Society of Applied Physics.
more