A new bias scheme for a low power consumption ReRAM crossbar array
- 주제(키워드) crossbar array , nonvolatile memory , power consumption , read margin , ReRAM
- 등재 SCIE, SCOPUS
- 발행기관 Institute of Physics Publishing
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000131149
- 본문언어 영어
- Published As http://dx.doi.org/10.1088/0268-1242/31/8/085009
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
This paper proposes a new bias scheme for a crossbar array that can improve the power consumption and read margin. The concept of the newly proposed 5/12 bias scheme is to reduce the bias of the unselected cells for power consumption and the bias of half-selected cells for a reduced line voltage drop of the selected cell. In the 5/12 bias scheme, the unselected word line and bit line are biased to 5 × V app/12 and 7 × V app/12, respectively. The electrical characteristics of the 5/12 bias scheme are evaluated by HSPICE simulations and it is found that appropriate nonlinearity of selector can simultaneously achieve low power consumption and high read margin for 5/12 bias scheme. © 2016 IOP Publishing Ltd.
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