Preparation of new semiconducting tetraphenylethynyl porphyrin derivatives and their high-performing organic field-effect transistors
- 주제(키워드) Field-effect transistor , Porphyrin , Semiconductor , Thin film , π-π interaction
- 등재 SCIE, SCOPUS
- 발행기관 Elsevier Ltd
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000136201
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.synthmet.2016.05.021
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
The design and synthesis of new solution processable semiconducting π-extended porphyrin derivatives H2TPEP and ZnTPEP were introduced and their use in the fabrication of high-performing thin film and single-crystal OFET devices were described. Due to strong π-π interactions, new porphyrin derivatives showed high crystallinity in film state and displayed excellent electrical characteristics with high carrier mobilities of 0.15 cm2/Vs for ZnTPEP and 0.029 cm2/Vs for H2TPEP together with high on/off current ratios of >105 and >104, respectively. When the devices were fabricated with their single crystals, ZnTPEP displayed excellent characteristic with a high mobility of 0.2 cm2/Vs and H2TPEP showed 0.3 cm2/Vs with high on/off current ratios of >104 and >105, respectively. Remarkably, although Zn(II)-porphyrin based single-crystal device usually shows much higher mobility than the device made of free-based porphyrin single-crystal, the mobility of H2TPEP single-crystal device was significantly higher than that of the ZnTPEP one, because of effective crystalline packing with short layer distances found in the single-crystal prepared from H2TPEP. © 2016 Elsevier B.V. All rights reserved.
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