Engineering performance of barristors by varying the thickness of WS2
- 주제(키워드) Barristor , Graphene , Scaling law , Tungsten disulfide
- 발행기관 Elsevier B.V.
- 발행년도 2017
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000139378
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.cap.2016.10.015
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors. © 2016 Elsevier B.V.
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