Optical and electrical properties of Cu-based all oxide semi-transparent photodetector
- 등재 SCIE, SCOPUS
- 발행기관 AMER INST PHYSICS
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000140092
- 본문언어 영어
- Published As http://dx.doi.org/10.1063/1.4961692
초록/요약
Zero-bias operating Cu oxide-based photodetector was achieved by using large-scale available sputtering method. Cu oxide (Cu2O or CuO) was used as p-type transparent layer to form a hetero-junction by contacting n-type ZnO layer. All metal-oxide materials were employed to realize transparent device at room temperature and showed a high transparency (>75% at 600 nm) with excellent photoresponses. The structural, morphological, optical, and electrical properties of Cu oxides of CuO and Cu2O are evaluated in depth by UV-visible spectrometer, X-ray diffraction, scanning electron microscopy, atomic force microscopy, Kelvin probe force microscopy, and Hall measurements. We may suggest a route of high-functional Cu oxide-based photoelectric devices for the applications in flexible and transparent electronics. Published by AIP Publishing.
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