Sulfur to oxygen substitution in BiOCuSe and its effect on the thermoelectric properties
- 등재 SCIE, SCOPUS
- 발행기관 ROYAL SOC CHEMISTRY
- 발행년도 2016
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000140109
- 본문언어 영어
- Published As http://dx.doi.org/10.1039/c6ta04310k
초록/요약
The effects of S doping at the oxygen site on the thermoelectric properties of BiOCuSe have been investigated. The partial substitution of S ions at the O sites of BiOCuSe was achieved by sulfurization using CS2 gas. Analysis of the powder X-ray diffraction data indicates that the ZrCuSiAs structure of BiOCuSe is retained after sulfurization. Substitution of O with S leads to an increase in the lattice parameters and a decrease in the band gap. The electrical conductivity rises due to the increase of the electronic contribution with doping. S-doped BiOCuSe materials behave as a p-type semiconductor. The thermoelectric properties of S-doped BiOCuSe materials can be understood through the analysis of the electronic band structure and the density of states close to the Fermi level. The substitution of O sites with S provides possible directions toward the enhancement of the thermoelectric figure of merit of oxide materials with low electrical conductivity.
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