The effect of a source-contacted light shield on the electrical characteristics of an LTPS TFT
- 주제(키워드) light shield , low-temperature polycrystalline silicon (LTPS) , SPICE simulation , thinfilm transistor (TFT)
- 등재 SCIE, SCOPUS
- 발행기관 Institute of Physics Publishing
- 발행년도 2017
- URI http://www.dcollection.net/handler/ewha/000000147026
- 본문언어 영어
- Published As http://dx.doi.org/10.1088/1361-6641/aa7477
초록/요약
The electrical characteristics of a low-temperature polycrystalline silicon thin-film transistor (TFT) with a source-contacted light shield (SCLS) are observed and analyzed. Compared with that of a conventional TFT without a light shield (LS), the on-current of the TFT with an SCLS is lower because the SCLS blocks the fringing electric field from the drain to the active layer. Furthermore, the gate-to-source capacitance (C gs) of the TFT with an SCLS in the off and saturation regions is higher than that of a conventional TFT, which is due to the gate-to-LS capacitance (C g-LS). The electrical characteristics of the TFT with an SCLS are thoroughly investigated by two-dimensional device simulations, and a semi-empirical C g-LS model for SPICE simulation is proposed and verified. © 2017 IOP Publishing Ltd.
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