New modeling method for the dielectric relaxation of a DRAM cell capacitor
- 주제(키워드) Dielectric relaxation (DR) , Dynamic random access memory (DRAM) , Equivalent circuit , Modeling
- 등재 SCIE, SCOPUS
- 발행기관 Elsevier Ltd
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000150158
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.sse.2017.10.021
초록/요약
This study proposes a new method for automatically synthesizing the equivalent circuit of the dielectric relaxation (DR) characteristic in dynamic random access memory (DRAM) without frequency dependent capacitance measurement. Charge loss due to DR can be observed by a voltage drop at the storage node and this phenomenon can be analyzed by an equivalent circuit. The Havariliak-Negami model is used to accurately determine the electrical characteristic parameters of an equivalent circuit. The DRAM sensing operation is performed in HSPICE simulations to verify this new method. The simulation demonstrates that the storage node voltage drop resulting from DR and the reduction in the sensing voltage margin, which has a critical impact on DRAM read operation, can be accurately estimated using this new method. © 2017 Elsevier Ltd
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