Enhanced electrical properties of Li-doped NiOx hole extraction layer in p-i-n type perovskite solar cells
- 주제(키워드) Perovskite , Solar cell , NiOx , Hole extraction
- 주제(기타) Materials Science, Multidisciplinary; Physics, Applied
- 설명문(일반) [Park, Min-Ah; Park, Ik Jae; Kim, Jin Young] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea; [Park, Sungmin; Son, Hae Jung] KIST, Photoelect Hybrid Res Ctr, Seoul 02792, South Korea; [Park, Sungmin] Korea Univ, Dept Chem, Seoul 02841, South Korea; [Kim, Jihye; Jo, William] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea
- 발행기관 ELSEVIER SCIENCE BV
- 발행년도 2018
- 회의명 Nano Korea Symposium
- 개최지 Ilsan, SOUTH KOREA
- 일자 JUL 12-14, 2017
- URI http://www.dcollection.net/handler/ewha/000000151544
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.cap.2017.11.010
초록/요약
We report a suitable Li-doped NiOx hole-extraction layer of p-i-n type planar perovskite solar cell as an alternative to organic material such as PEDOT:PSS. The Li-doped NiOx used as hole-extraction layer can be prepared by facile method of just adding Li source to NiOx precursor solution to form Li-doped NiOx layer. The presence of Li in NiOx layer has an influence on conductivity of the NiOx layer which is evidenced by the conductive AFM. In addition, the NiOx layer with 50 nm thickness prevents a lot of pinholes inside the film and relatively low processing temperature of 200 degrees C has the advantage of wide choice of transparent conduction oxide substrate. As a result, p-i-n type planar perovskite solar cell incorporating the Li-doped NiOx hole-extraction layer is improved with significantly enhanced fill factor leading to increase in conversion efficiency of 15.41%. (C) 2017 Elsevier B.V. All rights reserved.
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