Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)(2) Thin Film Solar Cell through Interface Engineering
- 주제(키워드) CIGS thin-film solar cell , solution-process , grain growth , p-n junction , interface engineering , band alignment
- 주제(기타) Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
- 설명문(일반) [Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun] Korea Inst Sci & Technol, Clean Energy Res Ctr, Seoul 02792, South Korea; [Park, Gi Soon; Min, Byoung Koun] Korea Univ, Green Sch, Seoul 02841, South Korea; [Kim, Dong-Wook] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Chu, Van Ben] Dongguk Univ, Dept Chem & Biochem Engn, Seoul 04620, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000151635
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acsami.8b00526
초록/요약
An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.
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