Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate
- 주제(키워드) anisotropic magnetoresistance , antiferromagnetic spintronics , isospins , perovskite iridates
- 등재 SCIE, SCOPUS
- 발행기관 Wiley-VCH Verlag
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000155644
- 본문언어 영어
- Published As http://dx.doi.org/10.1002/adma.201805564
초록/요약
The novel electronic state of the canted antiferromagnetic (AFM) insulator strontium iridate (Sr2IrO4) is well described by the spin–orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining the unique characteristics of the isospin state in Sr2IrO4. Based on magnetic and transport measurements, a large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the AFM isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to the in-plane net magnetic moment encounter an isospin mismatch when moving across the AFM domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As this work establishes a link between isospins and magnetotransport in strongly spin–orbit-coupled AFM Sr2IrO4, the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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