Analysis of read margin of crossbar array according to selector and resistor variation
- 주제(키워드) Crossbar array , read margin , RRAM
- 후원정보 Ministry of Education, Science and Technology
- 등재 SCOPUS
- 발행기관 Institute of Electrical and Electronics Engineers Inc.
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000155683
- ISBN 9781538647547
- 본문언어 영어
- Published As http://dx.doi.org/10.23919/ELINFOCOM.2018.8330651
초록/요약
The distribution characteristic of large-scale crossbar array architecture is investigated by a variability-aware MATLAB simulator. The read margin (RM) is examined as functions of array size, distribution of selector and resistor. The RM is strongly affected by the distribution of low resistance state (LRS) rather than that of high resistance state (HRS). Also, as the array size increases, the RM due to the selector variation continues to decrease, while as the RM degradation due to the resistor variation slows down. This phenomenon occurs because the leakage current of the crossbar array is greatly affected by the selector rather than the resistor. © 2018 Institute of Electronics and Information Engineers.
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