A CMOS high-performance inductorless ring VCO with extended monotonic tuning voltage range
- 주제(키워드) CMOS , ring VCO , monotonic tuning , phase noise , dual-delay
- 주제(기타) Engineering, Electrical & Electronic
- 설명문(일반) [Zhang Changchun; Wang Xinwen; Fang Junliang] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China; [Zhang Changchun; Wang Xinwen; Fang Junliang] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China; [Zhang Changchun; Lu, Tang] State Key Lab Millimeter Waves, Nanjing 210096, Jiangsu, Peoples R China; [Park, Sung Min] Ewha Womans Univ, Seoul 03760, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000156079
- 본문언어 영어
- Published As http://dx.doi.org/10.1587/elex.15.20180941
초록/요약
A high-performance inductorless ring VCO with wide tuning range and extended monotonic tuning voltage range (MTVR) is proposed and fabricated in standard 0.18 mu m CMOS technology. By combining the crossing-strength-tuning and load-resistance-tuning techniques with opposite tuning characteristics, the MTVR for the proposed VCO can be widened significantly. The dual-delay path technique is employed to improve the oscillating frequency. The cross-coupled pair is added to reduce phase noise and guarantee reliable differential-mode oscillation over the wide tuning voltage range. With an occupied area of 475 mu m x 275 mu m and a single supply voltage of 1.8 V, measurement results show the proposed VCO can oscillate with a frequency range from 1.57 to 2.76 GHz, phase noise of -91.12 dBc/Hz @ 1 MHz and FOMT of 164.5 dBc/Hz @ 1 MHz and extended MTVR.
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