A CMOS Dual-mode High-dynamic-range Wideband Receiver RF Front-end
- 주제(키워드) RF front-end , LNA , mixer , wideband , dynamic range
- 주제(기타) Engineering, Electrical & Electronic; Physics, Applied
- 설명문(일반) [Zhang, Changchun; Wu, Yingjian; Zhang, Peng; Zhang, Ying] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China; [Zhang, Changchun] State Key Lab Millimeter Waves, Nanjing 210096, Jiangsu, Peoples R China; [Liu, Jie] Inst Beijing Electromech Engn, Beijing 100074, Peoples R China; [Park, Sung Min] Ewha Womans Univ, Seoul 03760, South Korea
- 등재 SCIE, SCOPUS, KCI등재
- 발행기관 IEEK PUBLICATION CENTER
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000156081
- 본문언어 영어
- Published As http://dx.doi.org/10.5573/JSTS.2018.18.5.616
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
A dual-mode wideband high-dynamic-range receiver RF front-end consisting mainly of a low-noise amplifier (LNA) and a mixer is presented and implemented in standard 0.18 mu m CMOS technology. Besides wideband input matching, the wideband LNA is optimized purposefully for low NF and high gain, and the mixer for high linearity and proper gain. In high-gain (HG) mode, with the LNA involved, the high sensitivity can be achieved; in low-gain (LG) mode, with the LNA bypassed, the mixer stands out and makes the front-end exhibit high linearity. In an overall view, the proposed dual-mode wideband RF front-end achieves a high dynamic range. With an occupied die area of 2360 mu m x 1460 mu m and a single supply voltage of 1.8V, measurement results show the dual-mode RF front-end can operate across the desired frequency range of 1.3 similar to 2 GHz and achieve gain of 20 dB and NF of 4.8dB in the HG mode, and average IIP3 of 8 dBm and P1dB of -4 dB in the LG mode, respectively.
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