Facile Fabrication of a Two-Dimensional TMD/Si Heterojunction Photodiode by Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition
- 주제(키워드) two-dimensional materials , MoS2 , photodetectors , heterojunctions , AP-PECVD
- 주제(기타) Nanoscience & Nanotechnology; Materials Science, Multidisciplinary
- 설명문(일반) [Kim, Yonghun; Seo, Eun-Joo; Kwon, Jung-Dae] Korea Inst Mat Sci, Mat Ctr Energy Convergence, Surface Technol Div, 797 Changwondaero, Chang Won 51508, Gyongnam, South Korea; [Kwon, Soyeong; Kim, Dong-Wook] Ewha Womans Univ, Dept Phys, 52 Ewhayeodae Gil, Seoul 03760, South Korea; [Nam, Jae Hyeon; Jang, Hye Yeon; Cho, Byungjin] Chungbuk Natl Univ, Dept Adv Mat Engn, Chungdae Ro 1, Cheongju 28644, Chungbuk, South Korea; [Kwon, Se-Hun] Pusan Natl Univ, Sch Mat Sci & Engn, 30 Jangjeon Dong, Busan 46241, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000156288
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acsami.8b12896
초록/요약
A growth technique to directly prepare two-dimensional (2D) materials onto conventional semiconductor substrates, enabling low-temperature, high-throughput, and large-area capability, is needed to realize competitive 2D transition-metal dichalcogenide (TMD)/three-dimensional (3D) semiconductor heterojunction devices. Therefore, we herein successfully developed an atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique, which could grow MoS2 and WS2 multilayers directly onto PET flexible substrate as well as 4-in. Si substrates at temperatures of <200 degrees C. The as-fabricated MoS2/Si and WS2/Si heterojunctions exhibited large and fast photocurrent responses under illumination of a green light. The measured photocurrent was linearly proportional to the laser power, indicating that trapping and detrapping of the photogenerated carriers at defect states could not significantly suppress the collection of photocarriers. All the results demonstrated that our AP-PECVD method could produce high-quality TMD/Si 2D-3D heterojunctions for optoelectronic applications.
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