Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
- 주제(키워드) GaN , Atomic layer deposition , Surface states , Barrier height
- 주제(기타) Physics, Multidisciplinary
- 설명문(일반) [Kim, Hogyoung] Seoul Natl Univ Sci & Technol, Dept Visual Opt, Seoul 01811, South Korea; [Cho, Yunae; Kim, Dong-Wook] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Kim, Dong Ha; Kim, Yong; Choi, Byung Joon] Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 01811, South Korea
- 발행기관 KOREAN PHYSICAL SOC
- 발행년도 2018
- URI http://www.dcollection.net/handler/ewha/000000156292
- 본문언어 영어
- Published As http://dx.doi.org/10.3938/jkps.73.349
- 저작권 이화여자대학교 논문은 저작권에 의해 보호받습니다.
초록/요약
The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and the thin surface barrier formed by surface states caused a large leakage current and a small capacitance. Due to surface passivation through the ALD process, the leakage current for the Au/Al2O3/GaN junction was reduced. The barrier height reduction for the Au/Al2O3/GaN junction was associated with interface dipole formation at the Al2O3/GaN interface.
more