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A simple and robust route toward flexible CIGS photovoltaic devices on polymer substrates: Atomic level microstructural analysis and local opto-electronic investigation

  • 주제(키워드) Solar cells , CIGS , Flexible , Polyimide , Atom probe tomography
  • 주제(기타) Energy & Fuels; Materials Science, Multidisciplinary; Physics, Applied
  • 설명문(일반) [Kim, Kihwan; Song, Soomin; Cho, Yunae; Shin, Donghyeop; Eo, Young-Joo; Jeong, Inyoung; Ahn, Seung Kyu; Cho, Ara; Gwak, Jihye] Korea Inst Energy Res, Photovolta Lab, Daejeon 34129, South Korea; [Kim, Juran; Kim, Jayeong; Yoon, Seokhyun; Jo, William] Ewha Womans Univ, Dept Phys, Seoul 03760, South Korea; [Gang, Myeng Gil; Kim, Jin Hyeok] Chonnam Natl Univ, Dept Mat Sci & Engn, Gwangju 61186, South Korea; [Kim, Se-Ho; Choi, Pyuck-Pa] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea; [Yun, Jae Ho] Korea Inst Energy Res, New & Renewable Energy Inst, Daejeon 34129, South Korea
  • 등재 SCIE, SCOPUS
  • 발행기관 ELSEVIER SCIENCE BV
  • 발행년도 2019
  • URI http://www.dcollection.net/handler/ewha/000000159986
  • 본문언어 영어
  • Published As http://dx.doi.org/10.1016/j.solmat.2019.03.008

초록/요약

In this work, copper indium gallium selenide (Cu(In,Ga)Se-2; CIGS) absorbers were grown on polyimide (PI)/molybdenum substrates by a three-stage co-evaporation process at various temperatures, film formation was systemically studied using various advanced characterization methods such as transmission electron microscopy, micro-Raman spectroscopy, Kelvin probe force microscopy, and atom probe tomography. The CIGS films on PI were found to exhibit considerable physical and electrical variations with respect to the process temperature of three-stage co-evaporation. In particular, when the process temperature reached 400 degrees C, the CIGS absorber on PI began to exhibit controlled microstructure and intergrain properties. By adjusting the microstructure and intergrain properties of the absorber films by means of the process temperature of three-stage co-evaporation, flexible CIGS solar cells on PI with an efficiency of 16.7% (with anti-refection coating) were achieved.

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