GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer
- 주제(키워드) Metal electrode substrate , Graphene , Gallium nitride microstructure , Epitaxial lateral overgrowth , Light-emitting diode arrays
- 주제(기타) Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
- 설명문(일반) [Chung, Kunook] Ulsan Natl Inst Sci & Technol UNIST, Dept Phys, Ulsan 44919, South Korea; [Lee, Keundong; Tchoe, Youngbin; Oh, Hongseok; Park, JunBeom; Yi, Gyu-Chul] Seoul Natl Univ, Inst Appl Phys, Res Inst Adv Mat, Dept Phys & Astron, Seoul 151747, South Korea; [Hyun, Jerome K.] Ewha Womans Univ, Dept Chem & Nanosci, Seoul 120750, South Korea
- 등재 SCIE, SCOPUS
- 발행기관 ELSEVIER SCIENCE BV
- 발행년도 2019
- URI http://www.dcollection.net/handler/ewha/000000160358
- 본문언어 영어
- Published As http://dx.doi.org/10.1016/j.nanoen.2019.03.040
초록/요약
We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-mu m-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of InxGa1-xN/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs.
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