Secure Circuit with Low-power On-chip Temperature Sensor for Detection of Temperature Fault Injection Attacks
- 주제(키워드) secure circuit , hardware security , physical attack protection , fault injection attacks , temperature fault injection attacks
- 주제(기타) Instruments & Instrumentation; Materials Science, Multidisciplinary
- 설명문(일반) [Kim, Hyungseup; Lee, Byeoncheol; Kim, Jaesung; Han, Kwonsang; Ko, Hyoungho] Chungnam Natl Univ, Dept Elect Engn, Daejeon 34134, South Korea; [Kim, Dong Kyue; Choi, Byong-Deok] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea; [Kim, Ji-Hoon] Ewha Womans Univ, Dept Elect & Elect Engn, Seoul 03760, South Korea
- 후원정보 Taiwan Assoc Engn & Technol Innovat
- 등재 SCIE, SCOPUS
- OA유형 gold
- 발행기관 MYU, SCIENTIFIC PUBLISHING DIVISION
- 발행년도 2019
- 회의명 International Multi-Conference on Engineering and Technology Innovation (IMETI)
- 개최지 Taipei, TAIWAN
- 일자 JUL 08-11, 2018
- URI http://www.dcollection.net/handler/ewha/000000160544
- 본문언어 영어
- Published As http://dx.doi.org/10.18494/SAM.2019.2258
초록/요약
In this paper, we present a secure circuit with a low-power on-chip temperature sensor for the detection of temperature fault injection attacks. Such attacks stress an electronic circuit by heating it beyond the allowed operation temperature range, inducing random modifications of the data in the memory cell or limiting the function of the target device. The objective of the proposed secure circuit with an on-chip temperature sensor is to detect temperature-based fault injection attacks and protect the secure contents of the target device. The proposed secure circuit detects and allows the shutdown of the protected circuit when the temperature is below -10 degrees C or above 80 degrees C. The protected circuit operates normally in the operation temperature range from -10 to 80 degrees C and can be shut down by the control block of the secure circuit outside of this operation temperature range. The proposed secure circuit has a simple structure and a small active area, and consists of a low-power temperature sensor, two comparators, and an XOR gate. It is fabricated using a standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) process with a small active area of 0.04 mm(2) and consuming 19.72 mu W with a 1.8 V power supply.
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