Growth and optical characteristics of high-quality ZnO thin films on graphene layers
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 주제(기타) Physics, Applied
- 등재 SCIE, SCOPUS
- 발행기관 AMER INST PHYSICS
- 발행년도 2015
- 총서유형 Journal
- URI http://www.dcollection.net/handler/ewha/000000161896
- 본문언어 영어
- Published As http://dx.doi.org/10.1063/1.4905488
초록/요약
We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL) characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metalorganic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm(2) at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy. (C) 2015 Author(s).
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