Doping-Induced Carrier Density Modulation in Polymer Field-Effect Transistors
- 주제(기타) Chemistry, Multidisciplinary
- 주제(기타) Chemistry, Physical
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 주제(기타) Physics, Applied
- 주제(기타) Physics, Condensed Matter
- 관리정보기술 faculty
- 등재 SCIE, SCOPUS
- 발행기관 WILEY-V C H VERLAG GMBH
- 발행년도 2016
- URI http://www.dcollection.net/handler/ewha/000000161990
- 본문언어 영어
- Published As http://dx.doi.org/10.1002/adma.201504307
초록/요약
Controlled device parameters of high-mobility polymer field-effect transistors (FETs) are demonstrated by modest doping and charge compensation. Through fleeting chemical vapor treatments of aligned poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b: 5,4-b'] dithiophen-2-yl)alt-[1,2,5] thiadiazolo-[3,4-c] pyridine] (PCDTPT) thin films as the charge transport layer in the FET channel, the FET properties are tailored by controlling doping concentration of the PCDTPT adjacent to metal electrodes.
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