Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain
- 주제(키워드) Strain , phase transition , semiconductor-metal transition , modulation , MoTe2
- 주제(기타) Chemistry, Multidisciplinary
- 주제(기타) Chemistry, Physical
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 주제(기타) Physics, Applied
- 주제(기타) Physics, Condensed Matter
- 관리정보기술 faculty
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2016
- URI http://www.dcollection.net/handler/ewha/000000161995
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acs.nanolett.5b03481
초록/요약
We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance similar to 10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.
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