Long-Range Lattice Engineering of MoTe2 by a 2D Electride
- 주제(키워드) MoTe2 , electride , doping , phase transition , electron diffusion , work function
- 주제(기타) Chemistry, Multidisciplinary
- 주제(기타) Chemistry, Physical
- 주제(기타) Nanoscience & Nanotechnology
- 주제(기타) Materials Science, Multidisciplinary
- 주제(기타) Physics, Applied
- 주제(기타) Physics, Condensed Matter
- 관리정보기술 faculty
- 등재 SCIE, SCOPUS
- 발행기관 AMER CHEMICAL SOC
- 발행년도 2017
- URI http://www.dcollection.net/handler/ewha/000000162122
- 본문언어 영어
- Published As http://dx.doi.org/10.1021/acs.nanolett.6b05199
초록/요약
Doping two-dimensional (2D) semiconductors beyond their degenerate levels provides the opportunity to investigate extreme carrier density-driven superconductivity and phase transition in 2D systems. Chemical functionalization and the ionic gating have achieved the high doping density, but their effective ranges have been limited to similar to 1 nm, which restricts the use of highly doped 2D semiconductors. Here, we report on electron diffusion from the 2D electride [Ca2N](+)e to MoTe2 over a distance of 100 nm from the contact interface, generating an electron doping density higher than 1.6 x 10(14) cm(2) and a lattice symmetry change of MoTe2 as a consequence of the extreme doping. The long-range lattice symmetry change, suggesting a length scale surpassing the depletion width of conventional metalsemiconductor junctions, was a consequence of the low work function (2.6 eV) with highly mobile anionic electron layers of [Ca2N](+)e . The combination of 2D electrides and layered materials yields a novel material design in terms of doping and lattice engineering.
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